Invention Grant
- Patent Title: Power amplifier
- Patent Title (中): 功率放大器
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Application No.: US14269267Application Date: 2014-05-05
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Publication No.: US09270236B2Publication Date: 2016-02-23
- Inventor: Shintaro Watanabe , Kazuhiro Iyomasa
- Applicant: Mitsubishi Electric Corporation
- Applicant Address: JP Tokyo
- Assignee: MITSUBISHI ELECTRIC CORPORATION
- Current Assignee: MITSUBISHI ELECTRIC CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Leydig, Voit & Mayer, Ltd.
- Priority: JP2013-188459 20130911
- Main IPC: H03F3/14
- IPC: H03F3/14 ; H03F1/56 ; H03F3/195 ; H03F3/24

Abstract:
A power amplifier is smaller in size and limits input noise having a differential frequency. A power amplifier has an input terminal, an amplifying transistor, a bias circuit, a filter circuit, and an impedance matching circuit. The bias circuit supplies a bias to the signal input side of the amplifying transistor. The filter circuit removes noise at the signal input side of the amplifying transistor. The filter circuit has a matching resistor, a chip inductor, and a chip capacitor. Each of the chip inductor and the chip capacitor is a surface mount device. The matching resistor is located on a semiconductor substrate, has a first end connected to a connection point of two MIM capacitors, and a second end connected to a connection point of one of the MIM capacitors and the signal input side of the amplifying transistor.
Public/Granted literature
- US20150070096A1 POWER AMPLIFIER Public/Granted day:2015-03-12
Information query
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