Invention Grant
US09270278B2 Spin transfer torque based memory elements for programmable device arrays
有权
用于可编程器件阵列的基于转移转矩的存储元件
- Patent Title: Spin transfer torque based memory elements for programmable device arrays
- Patent Title (中): 用于可编程器件阵列的基于转移转矩的存储元件
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Application No.: US13997962Application Date: 2012-03-30
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Publication No.: US09270278B2Publication Date: 2016-02-23
- Inventor: Arijit Raychowdhury , James W. Tschanz , Vivek De
- Applicant: Arijit Raychowdhury , James W. Tschanz , Vivek De
- Applicant Address: US CA Santa Clara
- Assignee: INTEL CORPORATION
- Current Assignee: INTEL CORPORATION
- Current Assignee Address: US CA Santa Clara
- Agency: Pillsbury Winthrop Shaw Pittman LLP
- International Application: PCT/US2012/031371 WO 20120330
- International Announcement: WO2013/147831 WO 20131003
- Main IPC: H03K19/177
- IPC: H03K19/177 ; G11C11/16

Abstract:
Disclosed herein are semiconductor device arrays, such as, Field Programmable Gate Arrays (FPGAs) and Complex Programmable Logic Arrays (CPLAs) that use high-density Spin Transfer Torque (STT)-based memory elements. STT-based memory elements can either be stand-alone FPGAs/CPLAs, or can be embedded in microprocessors and/or digital signal processing (DSP) system-on-chip (SoC) to provide design flexibility for implementing low power, scalable, secure and reconfigurable hardware architecture. Because the configuration is stored on the FPGA/CPLA die itself, the need for loading the configuration from external storage every time is eliminated when the device is powered on. In addition to instant startup, eliminating configuration I/O traffic results in power savings and possible pin count reduction. Security is greatly improved by eliminating the need to store configuration data in an external memory.
Public/Granted literature
- US20140035617A1 SPIN TRANSFER TORQUE BASED MEMORY ELEMENTS FOR PROGRAMMABLE DEVICE ARRAYS Public/Granted day:2014-02-06
Information query
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