Invention Grant
- Patent Title: Plasma processing apparatus
- Patent Title (中): 等离子体处理装置
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Application No.: US13990038Application Date: 2011-08-05
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Publication No.: US09271384B2Publication Date: 2016-02-23
- Inventor: Jinyuan Chen , Jiawei Dong , Feiyun Yang , Lei Yu , Xiaohong Song
- Applicant: Jinyuan Chen , Jiawei Dong , Feiyun Yang , Lei Yu , Xiaohong Song
- Applicant Address: CN Shanghai
- Assignee: IDEAL ENERGY (SHANGHAI) SUNFLOWER THIN FILM EQUIPMENT, LTD.
- Current Assignee: IDEAL ENERGY (SHANGHAI) SUNFLOWER THIN FILM EQUIPMENT, LTD.
- Current Assignee Address: CN Shanghai
- Agent Cheng-Ju Chiang
- Priority: CN201010571104 20101202
- International Application: PCT/CN2011/078063 WO 20110805
- International Announcement: WO2012/071903 WO 20120607
- Main IPC: H01J7/24
- IPC: H01J7/24 ; H05H1/46 ; H01J37/32 ; G21B3/00

Abstract:
The present invention provides a plasma processing apparatus. The apparatus includes a vacuum chamber, a plasma reactor arranged in the vacuum chamber for plasma processing, an RF power source for providing RF signals to the plasma reactor and an RF power transmission unit for transmitting RF signals from the RF power source to the plasma reactor inside the vacuum chamber. The RF power transmission unit includes a transmission line for transmitting RF signals and an outer conductor for shielding the electromagnetic field around the transmission line. The invention can effectively avoid the problem of electric discharge when RF signals transmit in a vacuum chamber, resulting in more security and less transmission power loss.
Public/Granted literature
- US20130249399A1 Plasma Processing Apparatus Public/Granted day:2013-09-26
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