Invention Grant
- Patent Title: Vapor deposition apparatus and method associated
- Patent Title (中): 蒸镀装置及方法相关
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Application No.: US14375821Application Date: 2012-07-11
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Publication No.: US09273396B2Publication Date: 2016-03-01
- Inventor: Masashi Mizuta
- Applicant: Masashi Mizuta
- Applicant Address: JP Tokyo
- Assignee: FURUKAWA CO., LTD.
- Current Assignee: FURUKAWA CO., LTD.
- Current Assignee Address: JP Tokyo
- Agency: Rankin, Hill & Clark LLP
- Priority: JP2012-094677 20120418
- International Application: PCT/JP2012/004466 WO 20120711
- International Announcement: WO2013/157057 WO 20131024
- Main IPC: H01L21/44
- IPC: H01L21/44 ; C23C16/52 ; C30B25/02 ; C23C16/30 ; C30B29/40 ; C23C16/455 ; C23C16/458 ; H01L21/02
Abstract:
A vapor deposition apparatus includes a deposition chamber for carrying out a deposition of a film on a substrate, source gas tubes for supplying a source gas, a transfer unit for transferring the substrate in the interior of the deposition chamber so that the substrate is alternately situated in a state where the substrate is located in a deposition region that faces the gas discharge port for supplying the source gas and in a state where the substrate is located in other region except the deposition region, while the source gas is supplied from a gas discharge port of any one of the source gas tubes, and a supply tube for supplying a gas containing group-V element to the substrate S located in the other region.
Public/Granted literature
- US20150275371A1 VAPOR DEPOSITION APPARATUS AND METHOD ASSOCIATED Public/Granted day:2015-10-01
Information query
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