One embodiment is a method for producing void-free electroplated metallic conductors, the method including steps of: (a) providing a substrate having an insulating mask formed over a metallic seed layer, said insulating mask having at least one opening formed therein, wherein inside the at least one opening only the bottom surface includes exposed metallic seed layer; (b) immersing the substrate in an electrolyte contained in an electrochemical deposition (ECD) cell, the ECD cell including at least one anode and a cathode, wherein the cathode includes at least the exposed metallic seed layer at the bottom of the at least one opening, and wherein the electrolyte includes plating metallic ions and at least one inhibitor additive, said metallic ions and said at least one inhibitor additive having concentrations; (c) providing agitation of the electrolyte across the surface of the substrate; (d) electroplating inside the at least one opening wherein (i) the agitation and the concentrations of the plating metallic ions and the at least one inhibitor additive produce void-free electroplated metal or alloy inside the at least one opening when applying to the substrate an average electroplating current density between 45-250 mA/cm2, and (ii) said electroplated metal or alloy is a material selected from a group consisting of Cu, Ag, Cu alloys, and Ag alloys; and (e) removing the insulating mask, and then removing the metallic seed layer which was covered by the insulating mask during step (d).