Invention Grant
- Patent Title: Electrostatic capacitance sensor
- Patent Title (中): 静电电容传感器
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Application No.: US13782777Application Date: 2013-03-01
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Publication No.: US09274153B2Publication Date: 2016-03-01
- Inventor: Katsumi Kakimoto , Hitoshi Yoshida , Nobuyuki Ibara , Shinichi Kishimoto , Hideki Ueda , Takeshi Okada , Takeshi Mori , Masatoshi Nomura , Jun Ogihara
- Applicant: PANASONIC CORPORATION
- Applicant Address: JP Osaka
- Assignee: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.
- Current Assignee: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.
- Current Assignee Address: JP Osaka
- Agency: McDermott Will & Emery LLP
- Priority: JP2012-046640 20120302
- Main IPC: G01R27/26
- IPC: G01R27/26 ; G01P15/08 ; G01P15/125 ; B81B3/00
Abstract:
An electrostatic capacitance sensor 1 includes a semiconductor substrate 4. A first fixing plate 2 is joined to a one-side surface 4a of the semiconductor substrate 4, and a second fixing plate 3 is joined to other-side surface 4b of the semiconductor substrate 4, whereby a space portion S is formed. Then, static electricity suppressing means 70 for suppressing static electricity from being generated in the space portion S is provided in the electrostatic capacitance sensor 1.
Public/Granted literature
- US20130229193A1 ELECTROSTATIC CAPACITANCE SENSOR Public/Granted day:2013-09-05
Information query
