Invention Grant
US09274432B2 Selective masking by photolithography (SMP) for making electrochemical measurements
有权
通过光刻技术进行选择性掩蔽（SMP）进行电化学测量
- Patent Title: Selective masking by photolithography (SMP) for making electrochemical measurements
- Patent Title (中): 通过光刻技术进行选择性掩蔽（SMP）进行电化学测量
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Application No.: US13618214Application Date: 2012-09-14
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Publication No.: US09274432B2Publication Date: 2016-03-01
- Inventor: Farrel Martin , Alberto Píqué , Raymond C Y Auyeung , Steve Policastro
- Applicant: Farrel Martin , Alberto Píqué , Raymond C Y Auyeung , Steve Policastro
- Applicant Address: US DC Washington
- Assignee: The United States of America, as represented by the Secretary of the Navy
- Current Assignee: The United States of America, as represented by the Secretary of the Navy
- Current Assignee Address: US DC Washington
- Agency: US Naval Research Laboratory
- Agent Stephen T. Hunnius
- Main IPC: G03F7/20
- IPC: G03F7/20 ; G03F7/26
Abstract:
A method for isolating microstructural regions or features on a surface for electrochemical experimentation comprising polishing a metal sample, coating the metal sample with a photoresist, selecting a region of interest of the metal sample, exposing the region of interest with light energy, developing the exposed photoresist and creating a developed region.
Public/Granted literature
- US20130248382A1 Selective Masking by Photolithography (SMP) for Making Electrochemical Measurements Public/Granted day:2013-09-26
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