Invention Grant
- Patent Title: Memory system
- Patent Title (中): 内存系统
-
Application No.: US14063159Application Date: 2013-10-25
-
Publication No.: US09274939B2Publication Date: 2016-03-01
- Inventor: Yun Kyoung Lee , Jung Ryul Ahn
- Applicant: SK hynix Inc.
- Applicant Address: KR Gyeonggi-do
- Assignee: SK Hynix Inc.
- Current Assignee: SK Hynix Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: William Park & Associates Ltd.
- Priority: KR10-2013-0095014 20130809
- Main IPC: G11C29/00
- IPC: G11C29/00 ; G06F12/02 ; G06F12/08

Abstract:
A memory system includes: a memory controller configured to change data to be stored in memory cells according to an address of a weak cell in order to store changed data having a lower program level than a highest program level among a plurality of program levels in peripheral cells adjacent to the weak cell; and a memory device configured to execute a program loop in order to store the changed data in a selected page.
Public/Granted literature
- US20150046666A1 MEMORY SYSTEM Public/Granted day:2015-02-12
Information query