Invention Grant
- Patent Title: Cell array and memory with stored value update
- Patent Title (中): 具有存储值更新的单元阵列和内存
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Application No.: US13719906Application Date: 2012-12-19
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Publication No.: US09275716B2Publication Date: 2016-03-01
- Inventor: Choung-Ki Song
- Applicant: SK hynix Inc.
- Applicant Address: KR Gyeonggi-do
- Assignee: SK Hynix Inc.
- Current Assignee: SK Hynix Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: IP & T Group LLP
- Priority: KR10-2012-0104745 20120920
- Main IPC: G11C7/00
- IPC: G11C7/00 ; G11C11/402 ; G11C7/20 ; G11C11/406 ; G11C7/02 ; G11C11/408

Abstract:
A memory includes a first cell array configured to include a plurality of first memory cells connected to a plurality of word lines, a second cell array configured to include a plurality of second memory cells connected to the plurality of word lines, wherein a group of the plurality of second memory cells which are connected to a corresponding word line stores the number of activations for the corresponding word line, and an activation number update unit configured to update a value stored in the corresponding group of the plurality of second memory cells connected to the activated word line of the plurality of word lines.
Public/Granted literature
- US20140078845A1 CELL ARRAY, MEMORY, AND MEMORY SYSTEM INCLUDING THE SAME Public/Granted day:2014-03-20
Information query