Invention Grant
US09275731B1 Systems and methods for increasing the read sensitivity of a resistive random access memory (RRAM)
有权
用于增加电阻随机存取存储器（RRAM）的读取灵敏度的系统和方法
- Patent Title: Systems and methods for increasing the read sensitivity of a resistive random access memory (RRAM)
- Patent Title (中): 用于增加电阻随机存取存储器（RRAM）的读取灵敏度的系统和方法
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Application No.: US14044281Application Date: 2013-10-02
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Publication No.: US09275731B1Publication Date: 2016-03-01
- Inventor: Pantas Sutardja , Albert Wu , Runzi Chang , Winston Lee , Peter Lee
- Applicant: Marvell International Ltd.
- Applicant Address: BM Hamilton
- Assignee: Marvell International Ltd.
- Current Assignee: Marvell International Ltd.
- Current Assignee Address: BM Hamilton
- Main IPC: G11C11/00
- IPC: G11C11/00 ; G11C13/00 ; G06F13/00
Abstract:
A resistive random access memory system includes a plurality of bitlines, a plurality of wordlines, and an array of resistive random access memory cells. Each of the resistive random access memory cells in the array includes a transistor and a resistive random access memory element connected in a common gate configuration.
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