Invention Grant
- Patent Title: Memory system, program method thereof, and computing system including the same
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Application No.: US14491156Application Date: 2014-09-19
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Publication No.: US09275742B2Publication Date: 2016-03-01
- Inventor: Jun-Ho Jang , In-Hwan Choi , Woon-Jae Chung , Song-Ho Yoon , Kyung-Wook Ye
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR
- Agency: Onello & Mello, LLP
- Priority: KR10-2007-0042041 20070430
- Main IPC: G11C11/34
- IPC: G11C11/34 ; G11C16/10 ; G11C11/56 ; G06F12/02

Abstract:
Disclosed is a memory system and a method of programming a multi-bit flash memory device which includes memory cells configured to store multi-bit data, where the method includes and the system is configured for determining whether data to be stored in a selected memory cell is an LSB data; and if data to be stored in a selected memory cell is not an LSB data, backing up lower data stored in the selected memory cell to a backup memory block of the multi-bit flash memory device.
Public/Granted literature
- US20150006802A1 MEMORY SYSTEM, PROGRAM METHOD THEREOF, AND COMPUTING SYSTEM INCLUDING THE SAME Public/Granted day:2015-01-01
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