Invention Grant
- Patent Title: Semiconductor device and method of manufacturing the same
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US13961497Application Date: 2013-08-07
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Publication No.: US09275935B2Publication Date: 2016-03-01
- Inventor: Ryohei Kitao , Yasuaki Tsuchiya
- Applicant: Renesas Electronics Corporation
- Applicant Address: JP Kawasaki-Shi, Kanagawa
- Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee Address: JP Kawasaki-Shi, Kanagawa
- Agency: McGinn IP Law Group, PLLC.
- Priority: JP2012-189177 20120829
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L21/768 ; H01L23/532 ; H01L23/522 ; H01L23/00 ; H01L21/683
Abstract:
Technology that achieves high integration of a semiconductor device employing TSV technology is provided. A through electrode is configured by a small-diameter through electrode having a first diameter and being formed on a main surface side of a semiconductor wafer, and a large-diameter through electrode having a second diameter larger than the above-described first diameter and being formed on a back surface side of the semiconductor wafer, and the small-diameter through electrode is arranged inside the large-diameter through electrode in a planar view so that a center position of the small-diameter through electrode and a center position of the large-diameter through electrode do not overlap with each other in the planar view.
Public/Granted literature
- US20140061940A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2014-03-06
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