Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US14116791Application Date: 2012-05-29
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Publication No.: US09275949B2Publication Date: 2016-03-01
- Inventor: Yuya Okada
- Applicant: Yuya Okada
- Applicant Address: JP Tokyo
- Assignee: CANON KABUSHIKI KAISHA
- Current Assignee: CANON KABUSHIKI KAISHA
- Current Assignee Address: JP Tokyo
- Agency: Fitzpatrick, Cella, Harper & Scinto
- Priority: JP2011-123178 20110601; JP2011-123179 20110601
- International Application: PCT/JP2012/064348 WO 20120529
- International Announcement: WO2012/165647 WO 20121206
- Main IPC: H01L21/50
- IPC: H01L21/50 ; H01L23/10 ; H01L23/52 ; H01L23/00 ; H01L27/146 ; H01L31/0203 ; H01L23/498

Abstract:
Provided is a semiconductor device in which a semiconductor element mounted on a wiring substrate is placed in a hollow portion, the hollow portion being formed by the wiring substrate, a protective member, and a wall member, with the wiring substrate, the protective member, and the wall member being a bottom surface, a top surface, and side surfaces thereof, respectively. The wall member has a vent hole provided therein, which communicates the hollow portion to/from the outside, and the vent hole includes a pillar member formed of a material having a linear expansion coefficient which is smaller than that of the wall member. Therefore, airtightness of the hollow portion is maintained to prevent entry of foreign matters at ordinary temperature, and vapor pressure in the hollow portion is relieved when heated.
Public/Granted literature
- US20140070411A1 SEMICONDUCTOR DEVICE Public/Granted day:2014-03-13
Information query
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