Invention Grant
- Patent Title: Substrate contact opening
- Patent Title (中): 基板接触开口
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Application No.: US14184849Application Date: 2014-02-20
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Publication No.: US09275964B2Publication Date: 2016-03-01
- Inventor: Chen-Hua Yu , Jiun Yi Wu
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater & Matsil, L.L.P.
- Main IPC: H01L21/44
- IPC: H01L21/44 ; H01L23/00 ; H01L23/498 ; H01L21/56 ; H01L23/31 ; H01L25/065

Abstract:
An under-bump metallization (UBM) structure for a substrate, such as an organic substrate, a ceramic substrate, a silicon or glass interposer, a high density interconnect, a printed circuit board, or the like, is provided. A buffer layer is formed over a contact pad on the substrate such that at least a portion of the contact pad is exposed. A conductor pad is formed within the opening and extends over at least a portion of the buffer layer. The conductor pad may have a uniform thickness and/or a non-planar surface. The substrate may be attached to another substrate and/or a die.
Public/Granted literature
- US20140170851A1 Substrate Contact Opening Public/Granted day:2014-06-19
Information query
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