Invention Grant
- Patent Title: Transistor and tunable inductance
- Patent Title (中): 晶体管和可调电感
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Application No.: US14080132Application Date: 2013-11-14
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Publication No.: US09275986B2Publication Date: 2016-03-01
- Inventor: Winfried Bakalski
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Eschweiler & Associates, LLC
- Main IPC: H01L27/06
- IPC: H01L27/06 ; H01L23/522
Abstract:
According to a first aspect embodiments provide a transistor including at least one gate region between at least one drain region and at least one source region, wherein a ratio between a width of the gate region and a length of the gate region exceeds 300.
Public/Granted literature
- US20150130556A1 Transistor and Tunable Inductance Public/Granted day:2015-05-14
Information query
IPC分类:
