Invention Grant
US09275990B2 Circuit and method for reducing BVii on highly overdriven devices
有权
用于在高度过载的设备上减少BVii的电路和方法
- Patent Title: Circuit and method for reducing BVii on highly overdriven devices
- Patent Title (中): 用于在高度过载的设备上减少BVii的电路和方法
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Application No.: US14703710Application Date: 2015-05-04
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Publication No.: US09275990B2Publication Date: 2016-03-01
- Inventor: John L. McCollum , Fethi Dhaoui
- Applicant: Microsemi SoC Corporation
- Applicant Address: US CA San Jose
- Assignee: Microsemi SoC Corporation
- Current Assignee: Microsemi SoC Corporation
- Current Assignee Address: US CA San Jose
- Agency: Leech Tishman Fuscaldo & Lampl
- Agent Kenneth D'Alessandro, Esq.
- Main IPC: H01L23/62
- IPC: H01L23/62 ; H01L27/06 ; H01L49/02 ; H01L29/08 ; H01L29/10
Abstract:
An integrated circuit is formed on a p-type semiconductor substrate connected to ground potential. A deep n-well is disposed in the p-type substrate. A p-well is disposed in the deep n-well. An n+ drain region and an n+ source region are disposed in the p-well, the n+ source region connected to a common potential. A p-type contact is disposed in the p-well and is connected to ground potential through a resistor.
Public/Granted literature
- US20150318278A1 Circuit and Method for Reducing BVii on Highly Overdriven Devices Public/Granted day:2015-11-05
Information query
IPC分类:
