Invention Grant
- Patent Title: Method of manufacturing element substrate
- Patent Title (中): 元件基板的制造方法
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Application No.: US14131232Application Date: 2012-07-12
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Publication No.: US09276019B2Publication Date: 2016-03-01
- Inventor: Takaharu Yamada , Ryohki Itoh , Masahiro Yoshida , Hidetoshi Nakagawa , Takuya Ohishi , Masahiro Matsuda , Kazutoshi Kida
- Applicant: Takaharu Yamada , Ryohki Itoh , Masahiro Yoshida , Hidetoshi Nakagawa , Takuya Ohishi , Masahiro Matsuda , Kazutoshi Kida
- Applicant Address: JP Osaka
- Assignee: SHARP KABUSHIKI KAISHA
- Current Assignee: SHARP KABUSHIKI KAISHA
- Current Assignee Address: JP Osaka
- Agency: Keating & Bennett, LLP
- Priority: JP2011-157882 20110719
- International Application: PCT/JP2012/067778 WO 20120712
- International Announcement: WO2013/011911 WO 20130124
- Main IPC: H01L27/12
- IPC: H01L27/12 ; G02F1/1333 ; G09G3/36 ; G02F1/13 ; H01L21/66 ; G02F1/1345

Abstract:
A method of manufacturing an array substrate 20 according to the present invention includes a line forming step, and line forming step includes following performances. A plurality of source lines 27 are formed on a glass substrate GS so as to extend from a first region A1 on the glass substrate GS to a second region A2 that is adjacent to the first region on an outer side thereof. A plurality of source driver side check lines 45A are formed on the glass substrate GS so as to extend from the second region A2 to a third region that is adjacent to the first region A1 on an outer side thereof and adjacent to the second region A2. A plurality of first line connection portions 49 are formed in the second region A2 and the first line connection portions 49 connect the source lines 27 and the first source driver side check lines 45A. A capacity stem line 43 and a common line 44 are formed to extend from the first region A1 to the third region A3. A second source driver side check line 45B and a second line connection portion 50 that connects each of the capacity stem line 43 and the common line 44 and the source driver side check line 45B are formed in the third region A3.
Public/Granted literature
- US20150044789A1 METHOD OF MANUFACTURING ELEMENT SUBSTRATE Public/Granted day:2015-02-12
Information query
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