Invention Grant
- Patent Title: Solid-state imaging device and manufacturing method of solid-state imaging device
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Application No.: US14604209Application Date: 2015-01-23
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Publication No.: US09276035B2Publication Date: 2016-03-01
- Inventor: Makio Nishimaki
- Applicant: FUJIFILM Corporation
- Applicant Address: JP Tokyo
- Assignee: FUJIFILM Corporation
- Current Assignee: FUJIFILM Corporation
- Current Assignee Address: JP Tokyo
- Agency: Birch, Stewart, Kolasch & Birch, LLP
- Priority: JP2011-079263 20110331
- Main IPC: H01L27/00
- IPC: H01L27/00 ; H01L27/146 ; H01L31/02 ; H01L31/18

Abstract:
A light receiving layer is formed with an array of photodiodes for accumulating signal charge produced by photoelectric conversion of incident light. A wiring layer provided with electrodes and wiring for controlling the photodiodes is formed behind the light receiving layer in a traveling direction of the incident light. In the light receiving layer, there is formed a projection and depression structure in which a pair of inclined surfaces have symmetric inclination directions and each inclined surface corresponds to each photodiode. Each inclined surface makes the incident light enter each photodiode by a light amount corresponding to an incident angle.
Public/Granted literature
- US20150194464A1 SOLID-STATE IMAGING DEVICE AND MANUFACTURING METHOD OF SOLID-STATE IMAGING DEVICE Public/Granted day:2015-07-09
Information query
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