Invention Grant
- Patent Title: SiC semiconductor device and manufacturing method thereof
- Patent Title (中): SiC半导体器件及其制造方法
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Application No.: US13784064Application Date: 2013-03-04
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Publication No.: US09276067B2Publication Date: 2016-03-01
- Inventor: Tatsuo Shimizu , Tetsuo Hatakeyama
- Applicant: Nat'l Inst. of Advanced Industrial Sci. and Tech.
- Applicant Address: JP Chiyoda-ku
- Assignee: National Institute of Advanced Industrial Science and Technology
- Current Assignee: National Institute of Advanced Industrial Science and Technology
- Current Assignee Address: JP Chiyoda-ku
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2012-050477 20120307
- Main IPC: H01L29/15
- IPC: H01L29/15 ; H01L31/0312 ; H01L29/16 ; H01L29/66 ; H01L29/739 ; H01L29/78 ; H01L21/265
Abstract:
An SiC semiconductor device having a p-type 4H—SiC region formed on a part of a surface portion of an SiC substrate, a defect reduction layer formed in a surface portion of the 4H—SiC region, the defect reduction layer having C defect density
Public/Granted literature
- US20130234161A1 SIC SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF Public/Granted day:2013-09-12
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