Invention Grant
- Patent Title: Gate overvoltage protection for compound semiconductor transistors
- Patent Title (中): 复合半导体晶体管的栅极过电压保护
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Application No.: US13435447Application Date: 2012-03-30
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Publication No.: US09276097B2Publication Date: 2016-03-01
- Inventor: Martin Vielemeyer , Michael Hutzler , Gilberto Curatola , Gianmauro Pozzovivo
- Applicant: Martin Vielemeyer , Michael Hutzler , Gilberto Curatola , Gianmauro Pozzovivo
- Applicant Address: AT Villach
- Assignee: Infineon Technologies Austria AG
- Current Assignee: Infineon Technologies Austria AG
- Current Assignee Address: AT Villach
- Agency: Murphy, Bilak & Homiller, PLLC
- Main IPC: H01L29/778
- IPC: H01L29/778 ; H01L29/861 ; H01L27/02 ; H01L29/16 ; H01L29/20
Abstract:
A transistor device includes a compound semiconductor body, a drain disposed in the compound semiconductor body and a source disposed in the compound semiconductor body and spaced apart from the drain by a channel region. A gate is provided for controlling the channel region. The transistor device further includes a gate overvoltage protection device connected between the source and the gate, the gate overvoltage protection device including p-type and n-type silicon-containing semiconductor material.
Public/Granted literature
- US20130256699A1 Gate Overvoltage Protection for Compound Semiconductor Transistors Public/Granted day:2013-10-03
Information query
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