A silicon carbide film includes a first range having a first breakdown voltage holding layer, a charge compensation region, a first junction terminal region, and a first guard ring region. The silicon carbide film includes a second range having a second breakdown voltage holding layer, a channel forming region, and a source region. The first and second breakdown voltage holding layers constitutes a breakdown voltage holding region having a thickness in an element portion. When voltage is applied to attain a maximum electric field strength of 0.4 MV/cm or more in the breakdown voltage holding region during an OFF state, a maximum electric field strength in the second range within the element portion is configured to be less than ⅔ of a maximum electric field strength in the first range.