Invention Grant
- Patent Title: Memory cell array and cell structure thereof
- Patent Title (中): 存储单元阵列及其单元结构
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Application No.: US14315383Application Date: 2014-06-26
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Publication No.: US09276108B2Publication Date: 2016-03-01
- Inventor: Jhon-Jhy Liaw
- Applicant: Taiwan Semiconductor Manufacturing Company Limited
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Company Limited
- Current Assignee: Taiwan Semiconductor Manufacturing Company Limited
- Current Assignee Address: TW Hsinchu
- Agency: Jones Day
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L21/337 ; H01L29/78 ; H01L27/112 ; H01L27/24

Abstract:
A read-only memory (ROM) cell array and a cell structure thereof is disclosed. The ROM cell array is coupled to a plurality rows of bit-lines and a plurality columns of word-lines and comprises: a plurality of sub-cell-arrays arranged along the column direction, each sub-cell-array comprising a plurality of unit cell structures. Each unit cell structure comprises: an cell base region defining a cell boundary, comprising an blanket OD layer having a wide-block profile arranged on a substrate and defining a continuous common source node, a drain pad disposed above the OD layer, arranged in selectively connection with a bit line, a vertical channel structure bridging between the drain pad and the OD layer, and a gate structure disposed vertically between the drain pad and the OD layer and arranged in connection with a word-line. The sub-cell-array boundary is defined entirely within the coverage of the OD layer.
Public/Granted literature
- US20150380547A1 MEMORY CELL ARRAY AND CELL STRUCTURE THEREOF Public/Granted day:2015-12-31
Information query
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