Invention Grant
US09276120B2 Transistor, method of manufacturing the transistor, semiconductor unit, method of manufacturing the semiconductor unit, display, and electronic apparatus
有权
晶体管，制造晶体管的方法，半导体单元，制造半导体单元的方法，显示器和电子设备
- Patent Title: Transistor, method of manufacturing the transistor, semiconductor unit, method of manufacturing the semiconductor unit, display, and electronic apparatus
- Patent Title (中): 晶体管，制造晶体管的方法，半导体单元，制造半导体单元的方法，显示器和电子设备
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Application No.: US14530943Application Date: 2014-11-03
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Publication No.: US09276120B2Publication Date: 2016-03-01
- Inventor: Narihiro Morosawa , Motohiro Toyota
- Applicant: Sony Corporation
- Applicant Address: JP Tokyo
- Assignee: Joled Inc.
- Current Assignee: Joled Inc.
- Current Assignee Address: JP Tokyo
- Agency: K&L Gates LLP
- Priority: JP2012-041561 20120228; JP2012-047586 20120305
- Main IPC: H01L27/14
- IPC: H01L27/14 ; H01L29/82 ; H01L29/84 ; H01L29/786 ; H01L29/66 ; H01L27/12
Abstract:
A method of manufacturing a transistor includes: forming an oxide semiconductor film and a gate electrode on a substrate, the oxide semiconductor film having a channel region, and the gate electrode facing the channel region; and forming an insulating film covering the gate electrode and the oxide semiconductor film. Infiltration of moisture from the insulating film into the oxide semiconductor film is suppressed by the substrate.
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