Invention Grant
- Patent Title: Semiconductor light emitting element and method of manufacturing semiconductor light emitting element
- Patent Title (中): 半导体发光元件及半导体发光元件的制造方法
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Application No.: US14060000Application Date: 2013-10-22
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Publication No.: US09276170B2Publication Date: 2016-03-01
- Inventor: Honglin Wang , Eisuke Yokoyama
- Applicant: TOYODA GOSEI CO., LTD.
- Applicant Address: JP Aichi
- Assignee: TOYODA GOSEI CO., LTD.
- Current Assignee: TOYODA GOSEI CO., LTD.
- Current Assignee Address: JP Aichi
- Agency: Sughrue Mion, PLLC
- Priority: JP2012-234187 20121023; JP2012-254089 20121120
- Main IPC: H01L27/15
- IPC: H01L27/15 ; H01L29/26 ; H01L31/12 ; H01L33/00 ; H01L33/20 ; H01L31/0352 ; H01L33/02 ; H01L33/24 ; H01L33/42

Abstract:
A semiconductor light emitting element includes a laminated semiconductor layer including a light emitting layer that emits light by passing a current, the laminated semiconductor layer has a lower semiconductor bottom surface, a semiconductor side surface that rises from an edge of the lower semiconductor bottom surface upwardly and outwardly of the laminated semiconductor layer, and a lower semiconductor top surface that faces upward by extending inwardly of the laminated semiconductor layer from an upper edge of the semiconductor side surface, an edge of the lower semiconductor top surface includes first and second linear portions extending linearly and plural connecting portions connecting the first and second linear portions, and, when viewed from a direction perpendicular to the lower semiconductor top surface, each connecting portion is positioned inside a point of intersection of extended lines of the first and second linear portions connected to the connecting portion.
Public/Granted literature
- US20140110744A1 SEMICONDUCTOR LIGHT EMITTING ELEMENT AND METHOD OF MANUFACTURING SEMICONDUCTOR LIGHT EMITTING ELEMENT Public/Granted day:2014-04-24
Information query
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