Invention Grant
US09276190B2 Practical method of producing an aerogel composite continuous thin film thermoelectric semiconductor material by modified MOCVD
有权
通过改性MOCVD生产气凝胶复合连续薄膜热电半导体材料的实用方法
- Patent Title: Practical method of producing an aerogel composite continuous thin film thermoelectric semiconductor material by modified MOCVD
- Patent Title (中): 通过改性MOCVD生产气凝胶复合连续薄膜热电半导体材料的实用方法
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Application No.: US14687925Application Date: 2015-04-16
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Publication No.: US09276190B2Publication Date: 2016-03-01
- Inventor: The Pen
- Applicant: The Pen
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L35/34 ; H01L35/14 ; H01L35/30

Abstract:
A method is disclosed of constructing a composite material structure, comprised of an aerogel substrate, which is then overlaid throughout its interior with an even and continuous thin layer film of doped thermoelectric semiconductor such that electrical current is transmitted as a quantum surface phenomena, while the cross-section for thermal conductivity is kept low, with the aerogel itself dissipating that thermal conductivity. In one preferred embodiment this is achieved using a modified metal-organic chemical-vapor deposition (MOCVD) process in the gas phase, with the assist of microwave heating after the reactant gases have evenly diffused throughout the interior of the aerogel substrate.
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