Invention Grant
- Patent Title: Magnetic random access memory
- Patent Title (中): 磁性随机存取存储器
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Application No.: US13965149Application Date: 2013-08-12
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Publication No.: US09276195B2Publication Date: 2016-03-01
- Inventor: Hiroyuki Kanaya , Kuniaki Sugiura
- Applicant: Hiroyuki Kanaya , Kuniaki Sugiura
- Agency: Holtz, Holtz & Volek PC
- Main IPC: H01L29/82
- IPC: H01L29/82 ; H01L43/00 ; H01L43/02 ; H01L43/08 ; H01L27/22
Abstract:
According to one embodiment, a magnetic random access memory includes a magnetoresistive element, a contact arranged under the magnetoresistive element and connected to the magnetoresistive element, and an insulating film continuously formed from a periphery of the contact to a side surface of the magnetoresistive element and including a protective portion covering the side surface of the magnetoresistive element.
Public/Granted literature
- US20140284734A1 MAGNETIC RANDOM ACCESS MEMORY Public/Granted day:2014-09-25
Information query
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