Invention Grant
US09276201B2 Hybridized oxide capping layer for perpendicular magnetic anisotropy
有权
用于垂直磁各向异性的杂化氧化物覆盖层
- Patent Title: Hybridized oxide capping layer for perpendicular magnetic anisotropy
- Patent Title (中): 用于垂直磁各向异性的杂化氧化物覆盖层
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Application No.: US14867047Application Date: 2015-09-28
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Publication No.: US09276201B2Publication Date: 2016-03-01
- Inventor: Keyu Pi , Yu-Jen Wang , Ru-Ying Tong
- Applicant: Headway Technologies, Inc.
- Applicant Address: US CA Milpitas
- Assignee: Headway Technologies, Inc.
- Current Assignee: Headway Technologies, Inc.
- Current Assignee Address: US CA Milpitas
- Agency: Saile Ackerman LLC
- Agent Stephen B. Ackerman
- Main IPC: H01L29/82
- IPC: H01L29/82 ; H01L43/12 ; H01L27/22

Abstract:
A method of forming a hybrid oxide capping layer (HOCL) is disclosed and used in a magnetic tunnel junction to enhance thermal stability and perpendicular magnetic anisotropy in an adjoining free layer. The HOCL has a lower interface oxide layer and one or more transition metal oxide layers wherein each of the metal layers selected to form a transition metal oxide has an absolute value of free energy of oxide formation less than that of the metal used to make the interface oxide layer. One or more of the HOCL layers is under oxidized. Oxygen from one or more transition metal oxide layers preferably migrates into the interface oxide layer during annealing to further oxidize the interface oxide. As a result, a less strenuous oxidation step is required to initially oxidize the lower HOCL layer and minimizes oxidative damage to the free layer.
Public/Granted literature
- US20160020387A1 HYBRIDIZED OXIDE CAPPING LAYER FOR PERPENDICULAR MAGNETIC ANISOTROPY Public/Granted day:2016-01-21
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