Invention Grant
- Patent Title: Storage device
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Application No.: US14693533Application Date: 2015-04-22
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Publication No.: US09276205B2Publication Date: 2016-03-01
- Inventor: Yusuke Arayashiki , Hidenori Miyagawa , Tomohito Kawashima
- Applicant: KABUSHIKI KAISHA TOSHIBA
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Patterson & Sheridan, LLP
- Priority: JP2013-191204 20130913
- Main IPC: H01L47/00
- IPC: H01L47/00 ; H01L29/82 ; H01L43/00 ; H01L21/20 ; G11C11/00 ; H01L45/00 ; H01L27/24

Abstract:
According to one embodiment, a storage device includes first electrodes, second electrodes, a resistance change layer provided between the first electrodes and the second electrodes, and ion metal particles that are formed in an island form between the first electrodes and the resistance change layer and that contain a metal movable inside the resistance change layer. The first electrodes and the second electrodes are formed of a material which is more unlikely to be ionized as compared to the metal, and the first electrodes are in contact with the resistance change layer in an area around the ion metal particles.
Public/Granted literature
- US20150228892A1 STORAGE DEVICE Public/Granted day:2015-08-13
Information query
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