A method for fabricating the phase change memory cells. The method includes forming an electrically conductive bottom electrode within a substrate. A heat shield is formed within the substrate and above the bottom electrode. The heat shield is thermally coupled to the bottom electrode, includes a sidewall and extends away from the bottom electrode. A heating element is formed within the sidewall of the heat shield. The heating element is electrically coupled to the bottom electrode and is configured to generate heat during programming of the phase change memory cell.