Invention Grant
- Patent Title: Phase change memory with diodes embedded in substrate
- Patent Title (中): 相变存储器,二极管嵌入基板
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Application No.: US12969342Application Date: 2010-12-15
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Publication No.: US09276209B2Publication Date: 2016-03-01
- Inventor: Fang-Shi Jordan Lai , ChiaHua Ho , Fu-Liang Yang
- Applicant: Fang-Shi Jordan Lai , ChiaHua Ho , Fu-Liang Yang
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater & Matsil, L.L.P.
- Main IPC: H01L45/00
- IPC: H01L45/00 ; H01L27/24

Abstract:
An integrated circuit structure includes a semiconductor substrate; a diode; and a phase change element over and electrically connected to the diode. The diode includes a first doped semiconductor region of a first conductivity type, wherein the first doped semiconductor region is embedded in the semiconductor substrate; and a second doped semiconductor region over and adjoining the first doped semiconductor region, wherein the second doped semiconductor region is of a second conductivity type opposite the first conductivity type.
Public/Granted literature
- US20110092041A1 Phase Change Memory with Diodes Embedded in Substrate Public/Granted day:2011-04-21
Information query
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