A device for controlling light emissions and a method for fabricating the device are disclosed herein. A quantum well of an active region of a semiconductor device may comprise a quantum structure lattice having lattice geometries that satisfies the Bragg condition, such that inter-quantum structure distance d between a first quantum structure and a second quantum structure within the quantum structure lattice is an integer multiple of a emission half wavelength mλo/2n, where m is an integer, λo is a wavelength in free space, and n is a refractive index of a cladding material of the quantum well.