Invention Grant
- Patent Title: Quantum-size-controlled photoelectrochemical etching of semiconductor nanostructures
- Patent Title (中): 半导体纳米结构的量子尺寸控制光电化学蚀刻
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Application No.: US14624074Application Date: 2015-02-17
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Publication No.: US09276382B2Publication Date: 2016-03-01
- Inventor: Arthur J. Fischer , Jeffrey Y. Tsao , Jonathan J. Wierer, Jr. , Xiaoyin Xiao , George T. Wang
- Applicant: Sandia Corporation
- Applicant Address: US NM Albuquerque
- Assignee: Sandia Corporation
- Current Assignee: Sandia Corporation
- Current Assignee Address: US NM Albuquerque
- Agent Kevin W. Bieg
- Main IPC: H01L21/302
- IPC: H01L21/302 ; H01S5/343 ; H01L33/00 ; B82B1/00 ; C25F3/12 ; H01L21/3063 ; H01L33/18

Abstract:
Quantum-size-controlled photoelectrochemical (QSC-PEC) etching provides a new route to the precision fabrication of epitaxial semiconductor nanostructures in the sub-10-nm size regime. For example, quantum dots (QDs) can be QSC-PEC-etched from epitaxial InGaN thin films using narrowband laser photoexcitation, and the QD sizes (and hence bandgaps and photoluminescence wavelengths) are determined by the photoexcitation wavelength.
Public/Granted literature
- US20150270136A1 Quantum-Size-Controlled Photoelectrochemical Etching of Semiconductor Nanostructures Public/Granted day:2015-09-24
Information query
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