Invention Grant
- Patent Title: High frequency oscillator circuit
- Patent Title (中): 高频振荡电路
-
Application No.: US13569815Application Date: 2012-08-08
-
Publication No.: US09276524B2Publication Date: 2016-03-01
- Inventor: Keith A. Jenkins , Yu-ming Lin
- Applicant: Keith A. Jenkins , Yu-ming Lin
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Harrington & Smith
- Main IPC: H03B7/06
- IPC: H03B7/06 ; H03B5/12 ; H01L29/16 ; H01L29/786

Abstract:
An oscillator circuit includes a field effect transistor and a resonant circuit having a first terminal connected to the field effect transistor. The resonant circuit includes an inductance and a capacitance and has a second terminal for connecting to a radiator. The field effect transistor includes a gate electrode coupled to a source of gate voltage, a source electrode, a drain electrode and a graphene channel disposed between the source electrode and the drain electrode and electrically connected thereto. The graphene channel is disposed relative to the gate electrode for being biased by the gate electrode into a negative differential resistance region of operation. The oscillator circuit is capable of generating a continuous wave THz frequency signal, and is further capable of being enabled and disabled by the bias applied to the gate electrode.
Public/Granted literature
- US20150303871A1 HIGH FREQUENCY OSCILLATOR CIRCUIT Public/Granted day:2015-10-22
Information query