Invention Grant
- Patent Title: Radio-frequency switch having gate node voltage compensation network
- Patent Title (中): 具有门节点电压补偿网络的射频开关
-
Application No.: US13936177Application Date: 2013-07-06
-
Publication No.: US09276570B2Publication Date: 2016-03-01
- Inventor: Anuj Madan , Fikret Altunkilic , Guillaume Alexandre Blin
- Applicant: SKYWORKS SOLUTIONS, INC.
- Applicant Address: US MA Woburn
- Assignee: Skyworks Solutions, Inc.
- Current Assignee: Skyworks Solutions, Inc.
- Current Assignee Address: US MA Woburn
- Agency: Fernando Hale & Chang LLP
- Main IPC: H03K17/687
- IPC: H03K17/687 ; H03K17/06 ; H01L29/40 ; H01L27/088 ; H01L27/12 ; H03K17/693
Abstract:
Radio-frequency (RF) switch circuits are disclosed having transistor gate voltage compensation to provide improved switching performance. RF switch circuits include a plurality of field-effect transistors (FETs) connected in series between first and second nodes, each FET having a gate. A compensation network including a coupling circuit couples the gates of each pair of neighboring FETs.
Public/Granted literature
- US20140009211A1 RADIO-FREQUENCY SWITCH HAVING GATE NODE VOLTAGE COMPENSATION NETWORK Public/Granted day:2014-01-09
Information query
IPC分类:
