Invention Grant
- Patent Title: High-performance low-power near-Vt resistive memory-based FPGA
- Patent Title (中): 高性能低功率近Vt电阻式存储器FPGA
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Application No.: US14444422Application Date: 2014-07-28
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Publication No.: US09276573B2Publication Date: 2016-03-01
- Inventor: Pierre-Emmanuel Gaillardon , Xifan Tang , Giovanni De Micheli
- Applicant: ECOLE POLYTECHNIQUE FEDERALE DE LAUSANNE (EPFL)
- Applicant Address: CH Lausanne
- Assignee: ECOLE POLYTECHNIQUE FEDERALE DE LAUSANNE
- Current Assignee: ECOLE POLYTECHNIQUE FEDERALE DE LAUSANNE
- Current Assignee Address: CH Lausanne
- Agency: Hoffman Warnick LLC
- Main IPC: H03K19/177
- IPC: H03K19/177 ; H03K19/00 ; H03K19/094

Abstract:
A Field Programmable Gate Array (FPGA) of the island-type comprising a plurality of cluster-based Configurable Logic Blocks (CLBs), whereby each of the cluster-based CLBs is surrounded by a global routing structure formed by a plurality of multiplexers and pass/transmission-gates organized in Switch Boxes (SBs) and Connection Blocks (CBs), the switch boxes and the connection blocks comprising at least a first plurality of resistive memories inserted in a data path of a first routing architecture of the switch boxes and the connection blocks. Each CLB contains Basic Logic Elements (BLEs), as well as local routing resources.
Public/Granted literature
- US20160028396A1 HIGH-PERFORMANCE LOW-POWER NEAR-VT RESISTIVE MEMORY-BASED FPGA Public/Granted day:2016-01-28
Information query
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