Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US14315624Application Date: 2014-06-26
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Publication No.: US09276577B2Publication Date: 2016-03-01
- Inventor: Yoshiyuki Kurokawa
- Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
- Applicant Address: JP Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Kanagawa-ken
- Agency: Fish & Richardson P.C.
- Priority: JP2013-141214 20130705
- Main IPC: H03K19/0185
- IPC: H03K19/0185 ; G09G3/36

Abstract:
Path transistor malfunction is reduced. A path gate circuit includes transistors MP, MW, and MC. The transistor MP functions as a path transistor that connects a signal line INL to a signal line OUTL. The transistor MW connects a signal line BL for inputting a signal for setting the on or off state of the transistor MP and a node SN (gate of the transistor MP). When a high-level potential is written to the node SN, the potential of BL is set higher than a normal high-level potential if the potential of INL is high. Thus, even when the potential of the node SN is dropped in accordance with transition of INL from a high level to a low level, the potential drop does not influence the operation of the transistor MP because a high potential is written in advance.
Public/Granted literature
- US20150008958A1 SEMICONDUCTOR DEVICE Public/Granted day:2015-01-08
Information query
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