Invention Grant
US09276577B2 Semiconductor device 有权
半导体器件

Semiconductor device
Abstract:
Path transistor malfunction is reduced. A path gate circuit includes transistors MP, MW, and MC. The transistor MP functions as a path transistor that connects a signal line INL to a signal line OUTL. The transistor MW connects a signal line BL for inputting a signal for setting the on or off state of the transistor MP and a node SN (gate of the transistor MP). When a high-level potential is written to the node SN, the potential of BL is set higher than a normal high-level potential if the potential of INL is high. Thus, even when the potential of the node SN is dropped in accordance with transition of INL from a high level to a low level, the potential drop does not influence the operation of the transistor MP because a high potential is written in advance.
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