Invention Grant
- Patent Title: Apparatus for plasma treatment and method for plasma treatment
- Patent Title (中): 等离子体处理装置及等离子体处理方法
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Application No.: US13885708Application Date: 2011-11-16
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Publication No.: US09277637B2Publication Date: 2016-03-01
- Inventor: Toshihisa Nozawa , Caizhong Tian , Masaru Sasaki , Naoki Mihara , Naoki Matsumoto , Kazuki Moyama , Jun Yoshikawa
- Applicant: Toshihisa Nozawa , Caizhong Tian , Masaru Sasaki , Naoki Mihara , Naoki Matsumoto , Kazuki Moyama , Jun Yoshikawa
- Applicant Address: JP Tokyo
- Assignee: TOKYO ELECTRON LIMITED
- Current Assignee: TOKYO ELECTRON LIMITED
- Current Assignee Address: JP Tokyo
- Agency: Rothwell, Figg, Ernst & Manbeck, P.C.
- International Application: PCT/JP2011/006391 WO 20111116
- International Announcement: WO2012/066779 WO 20120524
- Main IPC: H01L21/306
- IPC: H01L21/306 ; H05H1/46 ; H01J37/32
Abstract:
An apparatus for plasma treatment contains a process vessel provided with a mounting table for mounting a substrate, a first gas supplying unit configured to supply a first gas into the process vessel, a first plasma generating unit configured to convert at least a part of the first gas to a first plasma, a second gas supplying unit configured to supply a second gas into the process vessel, and a second plasma generating unit configured to convert at least a part of the second gas to a second plasma. A height of ea an inlet of the second gas from the mounting table is lower than a height of an inlet of the first gas from the mounting table.
Public/Granted literature
- US20130302992A1 APPARATUS FOR PLASMA TREATMENT AND METHOD FOR PLASMA TREATMENT Public/Granted day:2013-11-14
Information query
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