Invention Grant
US09277639B2 Semiconductor circuit board, semiconductor device using the same, and method for manufacturing semiconductor circuit board
有权
半导体电路基板,使用该半导体电路基板的半导体装置以及半导体电路基板的制造方法
- Patent Title: Semiconductor circuit board, semiconductor device using the same, and method for manufacturing semiconductor circuit board
- Patent Title (中): 半导体电路基板,使用该半导体电路基板的半导体装置以及半导体电路基板的制造方法
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Application No.: US14433342Application Date: 2013-10-01
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Publication No.: US09277639B2Publication Date: 2016-03-01
- Inventor: Hiromasa Kato , Masanori Hoshino
- Applicant: Kabushiki Kaisha Toshiba , Toshiba Materials Co., Ltd.
- Applicant Address: JP Tokyo JP Yokohama-Shi
- Assignee: KABUSHIKI KAISHA TOSHIBA,TOSHIBA MATERIALS CO., LTD.
- Current Assignee: KABUSHIKI KAISHA TOSHIBA,TOSHIBA MATERIALS CO., LTD.
- Current Assignee Address: JP Tokyo JP Yokohama-Shi
- Agency: Foley & Lardner LLP
- Priority: JP2012-222239 20121004
- International Application: PCT/JP2013/076645 WO 20131001
- International Announcement: WO2014/054609 WO 20140410
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H05K1/02 ; H01L23/373 ; C04B37/02 ; H01L23/498 ; H05K1/03 ; H05K1/09 ; H01L25/07 ; H01L23/15 ; H01L21/48 ; H01L23/00

Abstract:
The present invention provides a semiconductor circuit board in which a conductor portion is provided on an insulating substrate, wherein a surface roughness of a semiconductor element-mounting section of the conductor portion is 0.3 μm or lower in arithmetic average roughness Ra, 2.5 μm or lower in ten-point average roughness Rzjis, 2.0 μm or smaller in maximum height Rz, and 0.5 μm or lower in arithmetic average waviness Wa. Further, assuming that a thickness of the insulating substrate is t1 and a thickness of the conductor portion is t2, the thickness of t1 and t2 satisfy a relation: 0.1≦t2/t1≦50. Due to above structure, even if an amount of heat generation of the semiconductor element is increased, there can be provided a semiconductor circuit board and a semiconductor device having excellent TCT characteristics.
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