Invention Grant
- Patent Title: Fault-tolerant multielectrode array for brain implantable device
- Patent Title (中): 用于脑植入装置的容错多电极阵列
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Application No.: US14114390Application Date: 2012-04-27
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Publication No.: US09277874B2Publication Date: 2016-03-08
- Inventor: Bharat S. Joshi , Ipsita Acharya , Hitten P. Zaveri
- Applicant: Bharat S. Joshi , Ipsita Acharya , Hitten P. Zaveri
- Applicant Address: US CT New Haven US NC Charlotte
- Assignee: YALE UNIVERSITY,THE UNIVERSITY OF NORTH CAROLINA AT CHARLOTTE
- Current Assignee: YALE UNIVERSITY,THE UNIVERSITY OF NORTH CAROLINA AT CHARLOTTE
- Current Assignee Address: US CT New Haven US NC Charlotte
- Agency: Welsh Flaxman & Gitler LLC
- International Application: PCT/US2012/035439 WO 20120427
- International Announcement: WO2012/149306 WO 20121101
- Main IPC: A61B5/0478
- IPC: A61B5/0478 ; A61B5/0476
Abstract:
A multielectrode array with fault-tolerance for use in conjunction with a brain implantable device includes a sensor grid composed of a plurality of sensors, the plurality of sensors including primary sensors and spare sensors. The multielectrode array also includes signal processing circuitry associated with the plurality of sensors and a control system associated with the sensor grid for replacing faulty primary sensors with spare sensors.
Public/Granted literature
- US20140058239A1 FAULT-TOLERANT MULTIELECTRODE ARRAY FOR BRAIN IMPLANTABLE DEVICE Public/Granted day:2014-02-27
Information query
