Invention Grant
- Patent Title: Micromachined monolithic 6-axis inertial sensor
- Patent Title (中): 微加工单片6轴惯性传感器
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Application No.: US13821793Application Date: 2011-09-18
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Publication No.: US09278846B2Publication Date: 2016-03-08
- Inventor: Cenk Acar
- Applicant: Cenk Acar
- Applicant Address: US CA San Jose
- Assignee: Fairchild Semiconductor Corporation
- Current Assignee: Fairchild Semiconductor Corporation
- Current Assignee Address: US CA San Jose
- Agency: Schwegman Lundberg & Woessner, P.A.
- International Application: PCT/US2011/052061 WO 20110918
- International Announcement: WO2012/037538 WO 20120322
- Main IPC: G01P15/18
- IPC: G01P15/18 ; G01P15/125 ; G01C19/56 ; B81B3/00 ; G01C19/5755 ; B81C1/00 ; G01C19/5712 ; G01P15/08

Abstract:
The device layer of a 6-degrees-of-freedom (6-DOF) inertial measurement system can include a single proof-mass 6-axis inertial sensor formed in an x-y plane, the inertial sensor including: a main proof-mass section suspended about a single, central anchor; a central suspension system configured to suspend the 6-axis inertial sensor from the single, central anchor; and a drive electrode including a moving portion and a stationary portion, the moving portion coupled to the radial portion. The drive electrode and the central suspension system are configured to oscillate the 6-axis inertial sensor about a z-axis normal to the x-y plane.
Public/Granted literature
- US20130270657A1 MICROMACHINED MONOLITHIC 6-AXIS INERTIAL SENSOR Public/Granted day:2013-10-17
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