Invention Grant
US09278863B2 Method for manufacturing graphene quantum dot using thermal plasma
有权
使用热等离子体制造石墨烯量子点的方法
- Patent Title: Method for manufacturing graphene quantum dot using thermal plasma
- Patent Title (中): 使用热等离子体制造石墨烯量子点的方法
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Application No.: US14557745Application Date: 2014-12-02
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Publication No.: US09278863B2Publication Date: 2016-03-08
- Inventor: Jung Sang Suh , Ju Han Kim
- Applicant: SNU R&DB FOUNDATION
- Applicant Address: KR Seoul
- Assignee: SNU R&DB FOUNDATION
- Current Assignee: SNU R&DB FOUNDATION
- Current Assignee Address: KR Seoul
- Agency: Brundidge & Stanger, P.C.
- Priority: KR10-2012-0062115 20120611; KR10-2013-0066141 20130610
- Main IPC: B82Y40/00
- IPC: B82Y40/00 ; B82Y15/00 ; C01B31/04 ; H01L21/02
Abstract:
The present application provides a method for producing a graphene quantum dot using thermal plasma, comprising injecting a carbon source into a thermal plasma jet to pyrolyze the carbon source so as to form a carbon atomic beam and allowing the carbon atomic beam to flow in a tube connected to an anode to produce a graphene quantum dot.
Public/Granted literature
- US20150087138A1 METHOD FOR MANUFACTURING GRAPHENE QUANTUM DOT USING THERMAL PLASMA Public/Granted day:2015-03-26
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