Invention Grant
- Patent Title: Method of forming a pattern and substrate processing system
- Patent Title (中): 形成图案和基板处理系统的方法
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Application No.: US14406809Application Date: 2013-07-10
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Publication No.: US09279184B2Publication Date: 2016-03-08
- Inventor: Kazuhiro Kubota , Ryukichi Shimizu
- Applicant: Tokyo Electron Limited
- Applicant Address: JP Tokyo
- Assignee: Tokyo Electron Limited
- Current Assignee: Tokyo Electron Limited
- Current Assignee Address: JP Tokyo
- Agency: IPUSA, PLLC
- Priority: JP2012-155359 20120711
- International Application: PCT/JP2013/068883 WO 20130710
- International Announcement: WO2014/010630 WO 20140116
- Main IPC: C23F1/02
- IPC: C23F1/02 ; C23C16/455 ; C23C16/04 ; C23C16/34 ; C23C16/40 ; H01L21/02 ; H01L21/311 ; H01J37/32 ; H01L21/768 ; H01L21/67
Abstract:
A method of forming a pattern is provided. The method includes an etching step of forming a predetermined pattern in a silicon-containing film by etching the silicon-containing film deposited on a substrate through a mask by plasma generated from an etching gas containing a fluorocarbon gas, and a film deposition step of depositing a silicon oxide film or a silicon nitride film on a surface of the predetermined pattern by oxidizing or nitriding a silicon-containing layer adsorbed on the surface of the predetermined pattern by supplying a silicon compound gas, by using plasma generated from an oxidation gas or a nitriding gas.
Public/Granted literature
- US20150167163A1 METHOD OF FORMING A PATTERN AND SUBSTRATE PROCESSING SYSTEM Public/Granted day:2015-06-18
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