Invention Grant
- Patent Title: Method of making a gallium nitride crystalline composition having a low dislocation density
- Patent Title (中): 制造具有低位错密度的氮化镓结晶组合物的方法
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Application No.: US11558048Application Date: 2006-11-09
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Publication No.: US09279193B2Publication Date: 2016-03-08
- Inventor: Mark Philip D'Evelyn , Kristi Jean Narang , Dong-Sil Park , Huicong Hong , Xian-An Cao , Larry Qiang Zeng
- Applicant: Mark Philip D'Evelyn , Kristi Jean Narang , Dong-Sil Park , Huicong Hong , Xian-An Cao , Larry Qiang Zeng
- Applicant Address: US NY Waterford
- Assignee: Momentive Performance Materials Inc.
- Current Assignee: Momentive Performance Materials Inc.
- Current Assignee Address: US NY Waterford
- Agency: McDonald Hopkins LLC
- Agent Joseph E. Waters, Esq.
- Main IPC: C30B23/02
- IPC: C30B23/02 ; C30B25/02 ; C30B9/08 ; C30B19/02 ; C30B19/12
Abstract:
A method for growing a crystalline composition, the first crystalline composition may include gallium and nitrogen. The crystalline composition may have an infrared absorption peak at about 3175 cm−1, with an absorbance per unit thickness of greater than about 0.01 cm−1. In one embodiment, the composition may have an amount of oxygen present in a concentration of less than about 3×1018 per cubic centimeter, and may be free of two-dimensional planar boundary defects in a determined volume of the first crystalline composition.
Public/Granted literature
- US20120017825A1 METHOD ASSOCIATED WITH A CRYSTALLINE COMPOSITION AND WAFER Public/Granted day:2012-01-26
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