Invention Grant
- Patent Title: Apparatus and method for measuring semiconductor carrier lifetime
- Patent Title (中): 测量半导体载体寿命的装置和方法
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Application No.: US13500305Application Date: 2010-10-01
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Publication No.: US09279762B2Publication Date: 2016-03-08
- Inventor: Kazushi Hayashi , Hiroyuki Takamatsu , Yoshito Fukumoto , Shingo Sumie
- Applicant: Kazushi Hayashi , Hiroyuki Takamatsu , Yoshito Fukumoto , Shingo Sumie
- Applicant Address: JP Hyogo JP Hyogo
- Assignee: Kobe Steel, Ltd.,Kobelco Research Institute, Inc.
- Current Assignee: Kobe Steel, Ltd.,Kobelco Research Institute, Inc.
- Current Assignee Address: JP Hyogo JP Hyogo
- Agency: Studebaker & Brackett PC
- Priority: JP2009-232880 20091006; JP2010-103331 20100428
- International Application: PCT/JP2010/005920 WO 20101001
- International Announcement: WO2011/043048 WO 20110414
- Main IPC: G01N21/31
- IPC: G01N21/31 ; G01N21/3563 ; H01L21/66

Abstract:
In a semiconductor carrier lifetime measuring apparatus A1 of the present invention, at least two types of light having mutually different wavelengths are irradiated onto a semiconductor X to be measured, a predetermined measurement wave is irradiated onto the semiconductor X to be measured, a reflected wave of the measurement wave that has been reflected by the semiconductor X to be measured or a transmitted wave of the measurement wave that has transmitted through the semiconductor X to be measured is detected, and the carrier lifetime in the semiconductor X to be measured is obtained based on the detection results so as to minimize the error. Accordingly, the semiconductor carrier lifetime measuring apparatus A1 configured as described above can more accurately measure the carrier lifetime.
Public/Granted literature
- US20120203473A1 APPARATUS AND METHOD FOR MEASURING SEMICONDUCTOR CARRIER LIFETIME Public/Granted day:2012-08-09
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