Analyzing a strain distribution in a semiconductor structure. One embodiment includes a method including: determining a crystallographic orientation of a portion of the semiconductor structure depicted in a diffraction pattern image, identifying a first and a second diffraction spot in the diffraction pattern image, and detecting an anticipated location of each of a plurality of diffraction spots, based on the first and second diffraction spot, and the determining of the crystallographic orientation. The method includes forming perimeter tiles around the first and the second diffraction spot, and the anticipated location of each of the plurality of diffraction spots, and storing each of the formed perimeter tiles of the diffraction pattern image. Finally the method includes determining the strain distribution in the semiconductor structure based on an actual location of the first and the second diffraction spot, and each of the plurality of diffraction spots within the perimeter tile.