Invention Grant
- Patent Title: Charge transfer circuit for capacitive sensing
- Patent Title (中): 电容传感电路
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Application No.: US14448431Application Date: 2014-07-31
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Publication No.: US09279843B2Publication Date: 2016-03-08
- Inventor: Hyeop Goo Yeo
- Applicant: Hyeop Goo Yeo
- Applicant Address: KR Gyeonggi-Do
- Assignee: Hanshin University Industry-Academic Cooperation Foundation
- Current Assignee: Hanshin University Industry-Academic Cooperation Foundation
- Current Assignee Address: KR Gyeonggi-Do
- Agency: Reinhart Boerner Van Deuren P.C.
- Priority: KR10-2013-0129553 20131019
- Main IPC: H03B1/00
- IPC: H03B1/00 ; G01R27/26

Abstract:
A charge transfer circuit for capacitive sensing is disclosed. The charge transfer circuit for capacitive sensing includes a variable capacitor, an X-drive unit, and an active output voltage feedback (AVF) part. The variable capacitor is disposed between the output terminal of an X-drive line and the input terminal of a Y-drive line. The X-drive unit is connected between the input unit of the X-drive line and a voltage input terminal. The active output voltage feedback (AVF) part is connected between the output terminal of the Y-drive line and a voltage output terminal. The output terminal of the AVF part is connected to the output terminal of the Y-drive line.
Public/Granted literature
- US20150108955A1 Charge Transfer Circuit for Capacitive Sensing Public/Granted day:2015-04-23
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