A vertical Hall sensor structure according to an embodiment includes a Hall effect region arranged between a first interface and a second interface of the Hall effect region, a first contact, a second contact, a third contact, and a fourth contact, the first, second, third and fourth contacts being closer to the first interface than to the second interface and in contact with the Hall effect region, wherein an electrical resistance between the first and second contacts is substantially equal to an electrical resistance between the third and second contacts, a conductive layer closer to the second interface than to the first interface and in contact with the Hall effect region, the conductive layer comprising a higher conductivity than the Hall effect region, wherein a resistance between the fourth contact and the conductive layer is lower than a resistance between the second contact and the conductive layer.