Invention Grant
US09280030B2 Method for producing semiconductor optical device and semiconductor optical device
有权
半导体光学器件和半导体光学器件的制造方法
- Patent Title: Method for producing semiconductor optical device and semiconductor optical device
- Patent Title (中): 半导体光学器件和半导体光学器件的制造方法
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Application No.: US14329095Application Date: 2014-07-11
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Publication No.: US09280030B2Publication Date: 2016-03-08
- Inventor: Daisuke Kimura , Hideki Yagi , Takamitsu Kitamura
- Applicant: SUMITOMO ELECTRIC INDUSTRIES, LTD.
- Applicant Address: JP Osaka
- Assignee: SUMITOMO ELECTRIC INDUSTRIES, LTD.
- Current Assignee: SUMITOMO ELECTRIC INDUSTRIES, LTD.
- Current Assignee Address: JP Osaka
- Agency: Smith, Gambrell & Russell LLP.
- Priority: JP2013-147260 20130716
- Main IPC: G02F1/225
- IPC: G02F1/225 ; G02F1/21

Abstract:
A method for producing a semiconductor optical device includes the steps of forming first and second optical waveguides; forming a first resin layer on the first and the second optical waveguides; forming an opening in the first resin layer; forming a first electrode in the opening; forming a second resin layer on the first electrode and the first resin layer; forming a groove in the second resin layer on the first electrode; forming a second electrode on the second resin layer, a side surface of the groove, and the top surface of the first electrode; and forming a third electrode on the second electrode. The second and third electrodes have a region in which the second and third electrodes pass over the second optical waveguide, and, in the region, the first and second resin layers are disposed between the second electrode and the second optical waveguide.
Public/Granted literature
- US20150023627A1 METHOD FOR PRODUCING SEMICONDUCTOR OPTICAL DEVICE AND SEMICONDUCTOR OPTICAL DEVICE Public/Granted day:2015-01-22
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