Invention Grant
- Patent Title: Cross quadrupole double lithography method using two complementary apertures
- Patent Title (中): 使用两个互补孔的十字四极双光刻法
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Application No.: US13791542Application Date: 2013-03-08
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Publication No.: US09280041B2Publication Date: 2016-03-08
- Inventor: Hsien-Cheng Wang , Hung Chang Hsieh , Shih-Che Wang , Ping Chieh Wu , Wen-Chun Huang , Ming-Chang Wen
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes and Boone, LLP
- Main IPC: G03B27/52
- IPC: G03B27/52 ; G03B27/54 ; G03F7/20 ; H01L21/302

Abstract:
A method of photolithography including coupling a first aperture to a lithography system, then performing a first illumination process to form a first pattern on a layer of a substrate using the first aperture, thereafter coupling a second aperture to the lithography system, and performing a second illumination process to form a second pattern on the layer of the substrate using the second aperture. The first aperture includes a first pair and a second pair of radiation-transmitting regions. The second aperture includes a second plate having a third pair and a fourth pair of radiation-transmitting regions.
Public/Granted literature
- US20130188164A1 DOUBLE DIPOLE LITHOGRAPHY METHOD FOR SEMICONDUCTOR DEVICE FABRICATION Public/Granted day:2013-07-25
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