A mask for EUV exposure and a method for repairing a mask for EUV exposure. The mask includes: a Mo/Si multi-layer film including a molybdenum layer and a silicon layer and being deposited on a substrate; a protection film formed on the Mo/Si multi-layer film; an absorption film formed on the protection film; and a reflectivity enhancing portion having a plurality of holes in the protection film. The method includes: specifying a position of a defect of the Mo/Si multi-layer film in an area of the protection film; and irradiating light beam, of which a diameter is narrowed down to be at or less than a wavelength of EUV exposure light, onto an area covering the position of the defect in a plan view of the mask for EUV exposure to form the reflectivity enhanced portion. The maximum width of the holes is equal to or less than the wavelength.